IndiumV3, Russie, Analysis, bibRecord, 000540

Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments

Identifieur interne : 000540 ( Russie/Analysis ); précédent : 000539; suivant : 000541

Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments

Auteurs : RBID : Pascal:03-0265393

Descripteurs français

Pascal (Inist)
- 8105E, 8165, 6835B, 6843M, 6172C, 7960B, Etude expérimentale, Indium composé, Semiconducteur III-V, Reconstruction surface, Traitement surface, LEED, Désorption, Recuit, Spectre photoélectron.

English descriptors

KwdEn :
- Annealing, Desorption, Experimental study, III-V semiconductors, Indium compounds, LEED, Photoelectron spectra, Surface reconstruction, Surface treatments.

Abstract

A simple treatment method using HCl/isopropanol solutions is given for preparation of high-quality InAs(001) surfaces. The surface structure and chemistry were characterized using low-energy electron diffraction and photoemission spectroscopy as a function of UHV temperature. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing arsenic and small amounts of InCl_x. Annealing at 330°C induces desorption of this overlayer and reveals a clean arsenic-rich (2×4)/c(2×8) surface. The indium-rich (4×2)/c(8×2) reconstruction is obtained upon further annealing to 410°C. © 2003 American Institute of Physics.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 00D367
to stream Main, to step Repository: 00C264
to stream Russie, to step Extraction: 000540

Links to Exploration step

Pascal:03-0265393

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments</title>
<author><name sortKey="Tereshchenko, O E" uniqKey="Tereshchenko O">O. E. Tereshchenko</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Novosibirsk State University, 630090 Novosibirsk, Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Institute of Semiconductor Physics, Novosibirsk State University, 630090 Novosibirsk</wicri:regionArea>
<wicri:noRegion>630090 Novosibirsk</wicri:noRegion>
</affiliation>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Laboratoire de Physique de la Matiere Condensee, Ecole Polytechnique, 91128 Palaiseau cedex, France</s1>
</inist:fA14>
<country xml:lang="fr">France</country>
<wicri:regionArea>Laboratoire de Physique de la Matiere Condensee, Ecole Polytechnique, 91128 Palaiseau cedex</wicri:regionArea>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Palaiseau</settlement>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Dipartimento di Fisica and INFM, Universita Tor Vergata, 00133 Roma, Italy</s1>
</inist:fA14>
<country xml:lang="fr">Italie</country>
<wicri:regionArea>Dipartimento di Fisica and INFM, Universita Tor Vergata, 00133 Roma</wicri:regionArea>
<placeName><settlement type="city">Rome</settlement>
<region nuts="2">Latium</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Paget, D" uniqKey="Paget D">D. Paget</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Novosibirsk State University, 630090 Novosibirsk, Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Institute of Semiconductor Physics, Novosibirsk State University, 630090 Novosibirsk</wicri:regionArea>
<wicri:noRegion>630090 Novosibirsk</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Chiaradia, P" uniqKey="Chiaradia P">P. Chiaradia</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Novosibirsk State University, 630090 Novosibirsk, Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Institute of Semiconductor Physics, Novosibirsk State University, 630090 Novosibirsk</wicri:regionArea>
<wicri:noRegion>630090 Novosibirsk</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Bonnet, J E" uniqKey="Bonnet J">J. E. Bonnet</name>
</author>
<author><name sortKey="Wiame, F" uniqKey="Wiame F">F. Wiame</name>
</author>
<author><name sortKey="Taleb Ibrahimi, A" uniqKey="Taleb Ibrahimi A">A. Taleb Ibrahimi</name>
</author>
</titleStmt>
<publicationStmt><idno type="inist">03-0265393</idno>
<date when="2003-06-16">2003-06-16</date>
<idno type="stanalyst">PASCAL 03-0265393 AIP</idno>
<idno type="RBID">Pascal:03-0265393</idno>
<idno type="wicri:Area/Main/Corpus">00D367</idno>
<idno type="wicri:Area/Main/Repository">00C264</idno>
<idno type="wicri:Area/Russie/Extraction">000540</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0003-6951</idno>
<title level="j" type="abbreviated">Appl. phys. lett.</title>
<title level="j" type="main">Applied physics letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Desorption</term>
<term>Experimental study</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>LEED</term>
<term>Photoelectron spectra</term>
<term>Surface reconstruction</term>
<term>Surface treatments</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>8105E</term>
<term>8165</term>
<term>6835B</term>
<term>6843M</term>
<term>6172C</term>
<term>7960B</term>
<term>Etude expérimentale</term>
<term>Indium composé</term>
<term>Semiconducteur III-V</term>
<term>Reconstruction surface</term>
<term>Traitement surface</term>
<term>LEED</term>
<term>Désorption</term>
<term>Recuit</term>
<term>Spectre photoélectron</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">A simple treatment method using HCl/isopropanol solutions is given for preparation of high-quality InAs(001) surfaces. The surface structure and chemistry were characterized using low-energy electron diffraction and photoemission spectroscopy as a function of UHV temperature. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing arsenic and small amounts of InCl<sub>x</sub>
. Annealing at 330°C induces desorption of this overlayer and reveals a clean arsenic-rich (2×4)/c(2×8) surface. The indium-rich (4×2)/c(8×2) reconstruction is obtained upon further annealing to 410°C. © 2003 American Institute of Physics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0>
</fA01>
<fA02 i1="01"><s0>APPLAB</s0>
</fA02>
<fA03 i2="1"><s0>Appl. phys. lett.</s0>
</fA03>
<fA05><s2>82</s2>
</fA05>
<fA06><s2>24</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>TERESHCHENKO (O. E.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>PAGET (D.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>CHIARADIA (P.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>BONNET (J. E.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>WIAME (F.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>TALEB IBRAHIMI (A.)</s1>
</fA11>
<fA14 i1="01"><s1>Institute of Semiconductor Physics, Novosibirsk State University, 630090 Novosibirsk, Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Laboratoire de Physique de la Matiere Condensee, Ecole Polytechnique, 91128 Palaiseau cedex, France</s1>
</fA14>
<fA14 i1="03"><s1>Dipartimento di Fisica and INFM, Universita Tor Vergata, 00133 Roma, Italy</s1>
</fA14>
<fA14 i1="04"><s1>LURE, Universite Paris-Sud, 91405, Orsay, France</s1>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA20><s1>4280-4282</s1>
</fA20>
<fA21><s1>2003-06-16</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>10020</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2003 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>03-0265393</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied physics letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>A simple treatment method using HCl/isopropanol solutions is given for preparation of high-quality InAs(001) surfaces. The surface structure and chemistry were characterized using low-energy electron diffraction and photoemission spectroscopy as a function of UHV temperature. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing arsenic and small amounts of InCl<sub>x</sub>
. Annealing at 330°C induces desorption of this overlayer and reveals a clean arsenic-rich (2×4)/c(2×8) surface. The indium-rich (4×2)/c(8×2) reconstruction is obtained upon further annealing to 410°C. © 2003 American Institute of Physics.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A05H</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A65</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B60H35B</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B60H45D</s0>
</fC02>
<fC02 i1="05" i2="3"><s0>001B60A72C</s0>
</fC02>
<fC02 i1="06" i2="3"><s0>001B70I60B</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>8105E</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>8165</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>6835B</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>6843M</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>6172C</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>7960B</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>III-V semiconductors</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Reconstruction surface</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Surface reconstruction</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Traitement surface</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Surface treatments</s0>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>LEED</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>LEED</s0>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Désorption</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Desorption</s0>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Recuit</s0>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Annealing</s0>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Spectre photoélectron</s0>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Photoelectron spectra</s0>
</fC03>
<fN21><s1>167</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0323M000179</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000540 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd -nk 000540 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:03-0265393
   |texte=   Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments

Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri